Technology CAD - Computer Simulation of IC Processes and Devices - 9781461364085
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Technology CAD - Computer Simulation of IC Processes and Devices Please note: this item is printed on demand and will take extra time before it can be dispatched to you (up to 20 working days). Author(s): Robert W. Dutton, Zhiping Yu Format: Paperback Publisher: Springer-Verlag New York Inc., United States Imprint: Springer-Verlag New York Inc. ISBN-13: 9781461364085, 978-1461364085 Synopsis 129 [url] Exercises 130 [url] References. 131 4 PN Junctions 131 [url] Introduction. 132 [url] Carrier Densities: Equilibrium Case [url] Non-Equilibrium .......... . 139 [url] Carrier Transport and Conservation 144 [url] The pn Junction - Equilibrium Conditions. [tel].6 The pn Junction - Non-equilibrium. [url] SEDAN Analysis . . . . . . . . . . . . . 166 [url] Heavy Doping Effects ..... . 176 [url] Analysis of High-Level Injection [tel].[url] Technology-Dependent Device Effects [url] Summary 193 [url] Exercises [tel].10 References. 5 MOS Structures 197 [url] Introduction ............. . 197 [url] The MOS Capacitor ........ . 198 [url] Basic MOSFET I-V Characteristics. 208 [url] Threshold Voltage in Nonuniform Substrate 217 [url] MOS Device Design by Simulation . . . . . 224 [url] Body-bias Sensitivity of Threshold Voltage 225 [url] Two-region Model . . . . . . . . 231 [url] MOSFET Design by Simulation. 234 [url] Summary 240 [url] Exercises 240 [url] References. 242 6 Bipolar Transistors 243 [url] Introduction ... 243 [url] Lateral pnp Transistor Operation 245 [url] Transport Current Analysis ... 252 [url] Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 [url] Charge Control Model ...
